15KP30A vs 15KPA30A feature comparison

15KP30A New England Semiconductor

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15KPA30A Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown compliant
Breakdown Voltage-Nom 35 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 50.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 15000 W 15000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -35 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 7 W 8 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 30 V 30 V
Reverse Current-Max 15 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 22 20
Package Description PLASTIC, P-600, 2 PIN
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 36.8 V
Breakdown Voltage-Min 33.3 V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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