11EQS10TA1B2 vs 11DQ10 feature comparison

11EQS10TA1B2 Nihon Inter Electronics Corporation

Buy Now Datasheet

11DQ10 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Part Life Cycle Code Transferred Active
Ihs Manufacturer NIHON INTER ELECTRONICS CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description O-PALF-W2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -40 °C -40 °C
Output Current-Max 1 A 1.1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 9
Rohs Code Yes
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY
Application GENERAL PURPOSE
Breakdown Voltage-Min 100 V
Forward Voltage-Max (VF) 0.96 V
JEDEC-95 Code DO-41
Non-rep Pk Forward Current-Max 17 A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 500 µA
Reverse Test Voltage 100 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 11EQS10TA1B2 with alternatives