1.5SMCJ8.0-AU-R1-00001
vs
SMCJ8.0AHR7G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
11.3 V
9.83 V
Breakdown Voltage-Min
8.89 V
8.89 V
Breakdown Voltage-Nom
10.1 V
9.36 V
Clamping Voltage-Max
15 V
13.6 V
Configuration
SINGLE
SINGLE
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
8 V
8 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Package Description
SMC, 2 PIN
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Diode Element Material
SILICON
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
5 W
Reference Standard
AEC-Q101
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare 1.5SMCJ8.0-AU-R1-00001 with alternatives
Compare SMCJ8.0AHR7G with alternatives