1.5SMC9.1_R2_00001 vs MSMCJLCE8.0AE3TR feature comparison

1.5SMC9.1_R2_00001 PanJit Semiconductor

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MSMCJLCE8.0AE3TR Microsemi Corporation

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer PAN JIT INTERNATIONAL INC MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE HIGH RELIABILITY
Breakdown Voltage-Max 10 V 9.83 V
Breakdown Voltage-Min 8.19 V 8.89 V
Breakdown Voltage-Nom 9.1 V 9.36 V
Clamping Voltage-Max 13.8 V 13.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-2 IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 7.37 V 8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Part Package Code DO-214AB
Pin Count 2
Diode Capacitance-Min 100 pF
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Reverse Current-Max 100 µA
Reverse Test Voltage 8 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1.5SMC9.1_R2_00001 with alternatives

Compare MSMCJLCE8.0AE3TR with alternatives