1.5SMC9.1AHV7G
vs
1.5SMCJ8.0A-AU-R1-00001
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Not Recommended
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
PAN JIT INTERNATIONAL INC
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
9.55 V
10.23 V
Breakdown Voltage-Min
8.65 V
8.89 V
Breakdown Voltage-Nom
9.1 V
9.56 V
Clamping Voltage-Max
13.4 V
13.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
Reference Standard
AEC-Q101; IEC-61249-2-21
Rep Pk Reverse Voltage-Max
7.78 V
8 V
Reverse Current-Max
50 µA
Reverse Test Voltage
7.78 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
1
1
Compare 1.5SMC9.1AHV7G with alternatives
Compare 1.5SMCJ8.0A-AU-R1-00001 with alternatives