1.5SMC9.1AHM6 vs MSMCJLCE8.0A feature comparison

1.5SMC9.1AHM6 Taiwan Semiconductor

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MSMCJLCE8.0A Microchip Technology Inc

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Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROCHIP TECHNOLOGY INC
Package Description R-PDSO-C2 SMCJ, 2 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY HIGH RELIABILITY
Breakdown Voltage-Max 9.55 V 9.83 V
Breakdown Voltage-Min 8.65 V 8.89 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 5 W
Reference Standard AEC-Q101 IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 7.78 V 8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 2
Factory Lead Time 40 Weeks
Breakdown Voltage-Nom 9.36 V
Clamping Voltage-Max 13.6 V
Diode Capacitance-Min 100 pF
Qualification Status Not Qualified
Reverse Current-Max 100 µA
Reverse Test Voltage 8 V

Compare 1.5SMC9.1AHM6 with alternatives

Compare MSMCJLCE8.0A with alternatives