1.5SMC9.1A-AU_R1_000A1 vs 1.5SMC9.1HV6G feature comparison

1.5SMC9.1A-AU_R1_000A1 PanJit Semiconductor

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1.5SMC9.1HV6G Taiwan Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 9.5 V 10 V
Breakdown Voltage-Min 8.65 V 8.19 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101; IEC-61000-4-2; TS 16949 AEC-Q101; IEC-61249-2-21
Rep Pk Reverse Voltage-Max 7.78 V 7.37 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 2 2
Breakdown Voltage-Nom 9.1 V
Clamping Voltage-Max 13.8 V
Forward Voltage-Max (VF) 3.5 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 6.5 W
Reverse Current-Max 50 µA
Reverse Test Voltage 7.37 V
Terminal Finish MATTE TIN

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