1.5SMC8.2C_R1_10001
vs
1.5SMC8.2CAHR7
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
9.02 V
8.61 V
Breakdown Voltage-Min
7.38 V
7.79 V
Breakdown Voltage-Nom
8.2 V
8.2 V
Clamping Voltage-Max
12.5 V
12.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Reference Standard
MIL-STD-750
AEC-Q101
Rep Pk Reverse Voltage-Max
6.63 V
7.02 V
Reverse Current-Max
400 µA
Reverse Test Voltage
6.63 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Package Description
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
6.5 W
Terminal Finish
MATTE TIN
Compare 1.5SMC8.2C_R1_10001 with alternatives
Compare 1.5SMC8.2CAHR7 with alternatives