1.5SMC8.2CHV6G vs 1.5SMC8.2C_R2_00001 feature comparison

1.5SMC8.2CHV6G Taiwan Semiconductor

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1.5SMC8.2C_R2_00001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD PAN JIT INTERNATIONAL INC
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max 9.02 V 9.02 V
Breakdown Voltage-Min 7.38 V 7.38 V
Breakdown Voltage-Nom 8.2 V 8.2 V
Clamping Voltage-Max 12.5 V 12.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 6.5 W
Reference Standard AEC-Q101; IEC-61249-2-21 IEC-61000-4-2
Rep Pk Reverse Voltage-Max 6.63 V 6.63 V
Reverse Current-Max 400 µA
Reverse Test Voltage 6.63 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
Pbfree Code Yes
Package Description R-PDSO-C2

Compare 1.5SMC8.2CHV6G with alternatives

Compare 1.5SMC8.2C_R2_00001 with alternatives