1.5SMC8.2AHM6G vs 1N5648 feature comparison

1.5SMC8.2AHM6G Taiwan Semiconductor

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1N5648 Semitronics Corp

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SEMITRONICS CORP
Package Description R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 8.61 V 47.3 V
Breakdown Voltage-Min 7.79 V 38.7 V
Breakdown Voltage-Nom 8.2 V 43 V
Clamping Voltage-Max 12.1 V 61.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-13
JESD-30 Code R-PDSO-C2 O-XALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 7.02 V 35 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND WIRE
Terminal Position DUAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 2
Case Connection ISOLATED
Qualification Status Not Qualified

Compare 1.5SMC8.2AHM6G with alternatives

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