1.5SMC39AHV6G
vs
SMCJ33AG-SMC-R
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
UNISONIC TECHNOLOGIES CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Samacsys Manufacturer
Taiwan Semiconductor
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
41 V
40.6 V
Breakdown Voltage-Min
37.1 V
36.7 V
Breakdown Voltage-Nom
39.05 V
Clamping Voltage-Max
53.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
6.5 W
Reference Standard
AEC-Q101; IEC-61249-2-21
Rep Pk Reverse Voltage-Max
33.3 V
33 V
Reverse Current-Max
1 µA
Reverse Test Voltage
33.3 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Base Number Matches
1
1
Package Description
R-PDSO-C2
Compare 1.5SMC39AHV6G with alternatives
Compare SMCJ33AG-SMC-R with alternatives