1.5SMC39AHV6G vs SMCJ33AG-SMC-R feature comparison

1.5SMC39AHV6G Taiwan Semiconductor

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SMCJ33AG-SMC-R Unisonic Technologies Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD UNISONIC TECHNOLOGIES CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 41 V 40.6 V
Breakdown Voltage-Min 37.1 V 36.7 V
Breakdown Voltage-Nom 39.05 V
Clamping Voltage-Max 53.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 6.5 W
Reference Standard AEC-Q101; IEC-61249-2-21
Rep Pk Reverse Voltage-Max 33.3 V 33 V
Reverse Current-Max 1 µA
Reverse Test Voltage 33.3 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 1
Package Description R-PDSO-C2

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