1.5SMC36CHM6 vs SMCG6052E3 feature comparison

1.5SMC36CHM6 Taiwan Semiconductor

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SMCG6052E3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROSEMI CORP
Package Description R-PDSO-C2 ROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY LOW INDUCTANCE
Breakdown Voltage-Max 39.6 V 39.6 V
Breakdown Voltage-Min 32.4 V 32.4 V
Breakdown Voltage-Nom 36 V 36 V
Clamping Voltage-Max 52 V 52 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-215AB
JESD-30 Code R-PDSO-C2 R-PDSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 6.5 W 5 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 29.1 V 29 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 6
Part Package Code DO-215AB
Pin Count 2
Qualification Status Not Qualified

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Compare SMCG6052E3 with alternatives