1.5SMC22HM6 vs 1.5SMC22_R2_10001 feature comparison

1.5SMC22HM6 Taiwan Semiconductor

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1.5SMC22_R2_10001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max 24.2 V 24.2 V
Breakdown Voltage-Min 19.8 V 19.8 V
Breakdown Voltage-Nom 22 V 22 V
Clamping Voltage-Max 31.9 V 31.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W
Reference Standard AEC-Q101 MIL-STD-750
Rep Pk Reverse Voltage-Max 17.8 V 17.8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 1 µA
Reverse Test Voltage 17.8 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1.5SMC22HM6 with alternatives

Compare 1.5SMC22_R2_10001 with alternatives