1.5SMC200HV6G vs 1.5SMC200HR6G feature comparison

1.5SMC200HV6G Taiwan Semiconductor

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1.5SMC200HR6G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Peak Reflow Temperature (Cel) 260 260
Terminal Finish MATTE TIN MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Package Description R-PDSO-C2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 220 V
Breakdown Voltage-Min 180 V
Breakdown Voltage-Nom 200 V
Clamping Voltage-Max 287 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL
Power Dissipation-Max 6.5 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 162 V
Surface Mount YES
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL

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