1.5SMC200A-M3/9AT
vs
1.5SMC200ATIN/LEAD
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code
not_compliant
not_compliant
Factory Lead Time
10 Weeks
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
210 V
210 V
Breakdown Voltage-Min
190 V
190 V
Breakdown Voltage-Nom
200 V
200 V
Clamping Voltage-Max
274 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
Rep Pk Reverse Voltage-Max
171 V
171 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
TIN LEAD
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
2
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Reverse Current-Max
5 µA
Reverse Test Voltage
171 V
Compare 1.5SMC200A-M3/9AT with alternatives
Compare 1.5SMC200ATIN/LEAD with alternatives