1.5SMC130_R1_10001 vs MXLSMCGLCE110AE3TR feature comparison

1.5SMC130_R1_10001 PanJit Semiconductor

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MXLSMCGLCE110AE3TR Microsemi Corporation

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer PAN JIT INTERNATIONAL INC MICROSEMI CORP
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE TR, 7 INCH: 750
Breakdown Voltage-Max 143 V 135 V
Breakdown Voltage-Min 117 V 122 V
Breakdown Voltage-Nom 130 V 128.5 V
Clamping Voltage-Max 187 V 178 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-215AB
JESD-30 Code R-PDSO-C2 R-PDSO-G2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard MIL-STD-750
Rep Pk Reverse Voltage-Max 105 V 110 V
Reverse Current-Max 1 µA
Reverse Test Voltage 105 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Part Package Code DO-215AB
Package Description R-PDSO-G2
Pin Count 2
Power Dissipation-Max 5 W
Qualification Status Not Qualified

Compare 1.5SMC130_R1_10001 with alternatives

Compare MXLSMCGLCE110AE3TR with alternatives