1.5SMC12A_R2_10001
vs
1.5SMC12ATR13
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max
12.6 V
12.6 V
Breakdown Voltage-Min
11.4 V
11.4 V
Breakdown Voltage-Nom
12 V
12 V
Clamping Voltage-Max
16.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
MIL-STD-750
Rep Pk Reverse Voltage-Max
10.2 V
10.2 V
Reverse Current-Max
5 µA
Reverse Test Voltage
10.2 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Package Description
R-PDSO-C2
JESD-609 Code
e0
Qualification Status
Not Qualified
Terminal Finish
TIN LEAD
Compare 1.5SMC12A_R2_10001 with alternatives
Compare 1.5SMC12ATR13 with alternatives