1.5SMC12AT3G vs SMCJ10-T3 feature comparison

1.5SMC12AT3G onsemi

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SMCJ10-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer ON SEMICONDUCTOR SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Manufacturer Package Code 403-03
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 12.6 V 13.57 V
Breakdown Voltage-Min 11.4 V 11.1 V
Breakdown Voltage-Nom 12 V
Clamping Voltage-Max 16.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.75 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 10.2 V 10 V
Surface Mount YES YES
Technology ZENER AVALANCHE
Terminal Finish TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 2
JEDEC-95 Code DO-214AB

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