1.5SMC120A_R1_10001 vs 1.5KE120A-H feature comparison

1.5SMC120A_R1_10001 PanJit Semiconductor

Buy Now Datasheet

1.5KE120A-H Formosa Microsemi Co Ltd

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC FORMOSA MICROSEMI CO LTD
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE EXCELLENT CLAMPING CAPABILITY; AMMO: 1200; BOX: 500
Breakdown Voltage-Max 126 V 126 V
Breakdown Voltage-Min 114 V 114 V
Breakdown Voltage-Nom 120 V 120 V
Clamping Voltage-Max 165 V 165 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-201AE
JESD-30 Code R-PDSO-C2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard MIL-STD-750
Rep Pk Reverse Voltage-Max 102 V 102 V
Reverse Current-Max 1 µA 5 µA
Reverse Test Voltage 102 V 102 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Form C BEND WIRE
Terminal Position DUAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Case Connection ISOLATED
Forward Voltage-Max (VF) 3.5 V
Power Dissipation-Max 6.5 W

Compare 1.5SMC120A_R1_10001 with alternatives

Compare 1.5KE120A-H with alternatives