1.5SMC11CABKTIN/LEAD vs 1.5SMC11CHR6G feature comparison

1.5SMC11CABKTIN/LEAD Central Semiconductor Corp

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1.5SMC11CHR6G Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 11 V 11 V
Clamping Voltage-Max 15.6 V 16.2 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 9.4 V 8.92 V
Surface Mount YES YES
Base Number Matches 1 1
Package Description R-PDSO-C2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 12.1 V
Breakdown Voltage-Min 9.9 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 6.5 W
Reference Standard AEC-Q101
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

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