1.5SMC110ATIN/LEAD
vs
1.5SMC110AHR6
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
115.5 V
116 V
Breakdown Voltage-Min
104.5 V
105 V
Breakdown Voltage-Nom
110 V
110 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
94 V
94 V
Reverse Current-Max
5 µA
Reverse Test Voltage
94 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Package Description
R-PDSO-C2
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Clamping Voltage-Max
152 V
JEDEC-95 Code
DO-214AB
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
6.5 W
Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30
Compare 1.5SMC110ATIN/LEAD with alternatives
Compare 1.5SMC110AHR6 with alternatives