1.5SMC100A-M3/57T vs 1.5SMC100_R1_10001 feature comparison

1.5SMC100A-M3/57T Vishay Semiconductors

Buy Now Datasheet

1.5SMC100_R1_10001 PanJit Semiconductor

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max 105 V 110 V
Breakdown Voltage-Min 95 V 90 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W
Rep Pk Reverse Voltage-Max 85.5 V 81 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Breakdown Voltage-Nom 100 V
Clamping Voltage-Max 144 V
Reference Standard MIL-STD-750
Reverse Current-Max 1 µA
Reverse Test Voltage 81 V

Compare 1.5SMC100A-M3/57T with alternatives

Compare 1.5SMC100_R1_10001 with alternatives