1.5KE82C vs 1.5KE82CATR feature comparison

1.5KE82C Galaxy Microelectronics

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1.5KE82CATR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD MICROSEMI CORP
Reach Compliance Code unknown unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 90.2 V 86.1 V
Breakdown Voltage-Min 73.8 V 77.9 V
Breakdown Voltage-Nom 82 V 82 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 118 V 113 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -50 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 6.5 W 1.52 W
Rep Pk Reverse Voltage-Max 66.4 V 70.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 63 5
Package Description PLASTIC, CASE 1, 2 PIN
Pin Count 2
Manufacturer Package Code CASE 1
ECCN Code EAR99
HTS Code 8541.10.00.50
JESD-609 Code e0
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Terminal Finish TIN LEAD

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