1.5KE62C vs JAN1N6161A feature comparison

1.5KE62C Sangdest Microelectronics (Nanjing) Co Ltd

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JAN1N6161A Microchip Technology Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROCHIP TECHNOLOGY INC
Package Description PLASTIC PACKAGE-2
Reach Compliance Code compliant compliant
Additional Feature EXCELLENT CLAMPING CAPABILITY HIGH RELIABILITY
Breakdown Voltage-Max 65.1 V
Breakdown Voltage-Min 58.9 V 58.9 V
Breakdown Voltage-Nom 62 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 85 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AD
JESD-30 Code O-PALF-W2 O-LALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Qualification Status Not Qualified Qualified
Reference Standard MIL-STD-202 MIL-19500
Rep Pk Reverse Voltage-Max 53 V 47.1 V
Reverse Current-Max 5 µA
Reverse Test Voltage 53 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 11 2
Factory Lead Time 25 Weeks
JESD-609 Code e0
Terminal Finish TIN LEAD

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