1.5KE6.8AHA0 vs 1N6267 feature comparison

1.5KE6.8AHA0 Taiwan Semiconductor

Buy Now Datasheet

1N6267 MDE Semiconductor Inc

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MDE SEMICONDUCTOR INC
Package Description O-PALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 7.14 V 7.48 V
Breakdown Voltage-Min 6.45 V 6.12 V
Breakdown Voltage-Nom 6.8 V 6.8 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 10.5 V 10.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201 DO-201
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Reference Standard AEC-Q101; UL RECOGNIZED MIL-STD-750; UL LISTED
Rep Pk Reverse Voltage-Max 5.8 V 5.5 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 40
Forward Voltage-Max (VF) 3.5 V
Reverse Test Voltage 5.5 V

Compare 1.5KE6.8AHA0 with alternatives