1.5KE51C-H vs 1.5KE51C-G feature comparison

1.5KE51C-H Formosa Microsemi Co Ltd

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1.5KE51C-G Comchip Technology Corporation Ltd

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Part Life Cycle Code Active Active
Ihs Manufacturer FORMOSA MICROSEMI CO LTD COMCHIP TECHNOLOGY CO LTD
Package Description O-PALF-W2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 53.6 V 56.1 V
Breakdown Voltage-Min 48.5 V 45.9 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AE DO-201
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 6.5 W 6.5 W
Rep Pk Reverse Voltage-Max 43.6 V 41.3 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 3
Rohs Code Yes
Breakdown Voltage-Nom 51 V
Clamping Voltage-Max 73.5 V
JESD-609 Code e3
Terminal Finish Tin (Sn)

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