1.5KE510E3/4G
vs
1.5KE510
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
VISHAY SEMICONDUCTORS
MDE SEMICONDUCTOR INC
Package Description
O-PALF-W2
Pin Count
2
Manufacturer Package Code
CASE 1.5KE
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max
561 V
561 V
Breakdown Voltage-Min
459 V
459 V
Breakdown Voltage-Nom
510 V
510 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
729 V
698 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
6.5 W
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
MIL-STD-750, UL LISTED
Rep Pk Reverse Voltage-Max
413 V
434 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
9
JEDEC-95 Code
DO-201
Reverse Current-Max
5 µA
Reverse Test Voltage
434 V
Compare 1.5KE510E3/4G with alternatives
Compare 1.5KE510 with alternatives