1.5KE39AE3TR vs MV1N6285E3TR feature comparison

1.5KE39AE3TR Microsemi Corporation

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MV1N6285E3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description O-PALF-W2 O-PALF-W2
Pin Count 2 2
Manufacturer Package Code CASE 1 CASE 1
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 41 V 42.9 V
Breakdown Voltage-Min 37.1 V 35.1 V
Breakdown Voltage-Nom 39 V 39 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 53.9 V 56.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W 1.52 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 33.3 V 31.6 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 15 1

Compare 1.5KE39AE3TR with alternatives

Compare MV1N6285E3TR with alternatives