1.5KE39-GT3
vs
1N6285
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Package Description |
O-PALF-W2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| Breakdown Voltage-Max |
42.9 V
|
|
| Breakdown Voltage-Min |
35.1 V
|
35.1 V
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-201AE
|
|
| JESD-30 Code |
O-PALF-W2
|
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
5 W
|
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
UL RECOGNIZED
|
|
| Rep Pk Reverse Voltage-Max |
31.6 V
|
31.6 V
|
| Surface Mount |
NO
|
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Base Number Matches |
2
|
36
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare 1.5KE39-GT3 with alternatives