1.5KE350C vs 1.5KE350C feature comparison

1.5KE350C EIC Semiconductor Inc

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1.5KE350C Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 350 V 350 V
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 284 V 300 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Base Number Matches 6 11
Package Description PLASTIC PACKAGE-2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 368 V
Breakdown Voltage-Min 332 V
Case Connection ISOLATED
Clamping Voltage-Max 482 V
Configuration SINGLE
JEDEC-95 Code DO-201AD
JESD-30 Code O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Reference Standard MIL-STD-202
Reverse Current-Max 5 µA
Reverse Test Voltage 300 V
Terminal Form WIRE
Terminal Position AXIAL

Compare 1.5KE350C with alternatives

Compare 1.5KE350C with alternatives