1.5KE33CA-G vs MX1.5KE33AE3TR feature comparison

1.5KE33CA-G Comchip Technology Corporation Ltd

Buy Now Datasheet

MX1.5KE33AE3TR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD MICROSEMI CORP
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Comchip Technology
Breakdown Voltage-Max 34.65 V 34.7 V
Breakdown Voltage-Min 31.35 V 31.4 V
Breakdown Voltage-Nom 33 V 33 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 45.7 V 45.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 1.52 W
Rep Pk Reverse Voltage-Max 28.2 V 28.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN MATTE TIN
Base Number Matches 3 1
Pbfree Code Yes
Package Description O-PALF-W2
Pin Count 2
Manufacturer Package Code CASE 1
JESD-30 Code O-PALF-W2
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MX1.5KE33AE3TR with alternatives