1.5KE30HA0G vs 1.5KE30T-G feature comparison

1.5KE30HA0G Taiwan Semiconductor

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1.5KE30T-G Comchip Technology Corporation Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD COMCHIP TECHNOLOGY CO LTD
Package Description O-PALF-W2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 33 V 33 V
Breakdown Voltage-Min 27 V 27 V
Breakdown Voltage-Nom 30 V 30 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 43.5 V 43.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201
JESD-30 Code O-PALF-W2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 6.5 W
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 24.3 V 24.3 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 1 1

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