1.5KE22ATR vs P6SMB82CATR13 feature comparison

1.5KE22ATR MDE Semiconductor Inc

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P6SMB82CATR13 Central Semiconductor Corp

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Part Life Cycle Code Active Active
Ihs Manufacturer MDE SEMICONDUCTOR INC CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max 23.1 V 86.1 V
Breakdown Voltage-Min 20.9 V 77.9 V
Breakdown Voltage-Nom 22 V 82 V
Case Connection ISOLATED
Clamping Voltage-Max 30.6 V 113 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201
JESD-30 Code O-PALF-W2 R-PDSO-C2
JESD-609 Code e3 e0
Non-rep Peak Rev Power Dis-Max 1500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 6.5 W
Reference Standard MIL-STD-750; UL LISTED
Rep Pk Reverse Voltage-Max 18.8 V 70.1 V
Reverse Current-Max 5 µA
Reverse Test Voltage 18.8 V
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin (Sn) TIN LEAD
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 1 6
Pbfree Code No
Rohs Code No
Qualification Status Not Qualified

Compare 1.5KE22ATR with alternatives

Compare P6SMB82CATR13 with alternatives