1.5KE22AHA0G
vs
1N6279ARL4G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
ON SEMICONDUCTOR
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE
Breakdown Voltage-Max
23.1 V
23.1 V
Breakdown Voltage-Min
20.9 V
20.9 V
Breakdown Voltage-Nom
22 V
22 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
30.6 V
30.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-201
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Reference Standard
AEC-Q101; UL RECOGNIZED
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
18.8 V
18.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
ZENER
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Pbfree Code
Pin Count
2
Manufacturer Package Code
CASE 41A-04
Qualification Status
Not Qualified
Compare 1.5KE22AHA0G with alternatives
Compare 1N6279ARL4G with alternatives