1.5KE200AT-G
vs
1.5KE200AHB0G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
COMCHIP TECHNOLOGY CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
210 V
210 V
Breakdown Voltage-Min
190 V
190 V
Breakdown Voltage-Nom
200 V
200 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
274 V
274 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-201AD
DO-201
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
5 W
Rep Pk Reverse Voltage-Max
171 V
171 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Package Description
O-PALF-W2
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Reference Standard
AEC-Q101; UL RECOGNIZED
Compare 1.5KE200AT-G with alternatives
Compare 1.5KE200AHB0G with alternatives