1.5KE18A0G vs 1N6277ATR feature comparison

1.5KE18A0G Taiwan Semiconductor

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1N6277ATR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Transferred
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROSEMI CORP
Package Description O-PALF-W2 CASE 1, 2 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY HIGH RELIABILITY
Breakdown Voltage-Max 19.8 V 18.9 V
Breakdown Voltage-Min 16.2 V 17.1 V
Breakdown Voltage-Nom 18 V 18 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 26.5 V 25.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1.52 W
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 14.5 V 15.3 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish PURE TIN TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 3
Pbfree Code No
Pin Count 2
Manufacturer Package Code CASE 1
JESD-609 Code e0
Moisture Sensitivity Level 1
Qualification Status Not Qualified

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