1.5KE180 vs 1.5KE180AHB0 feature comparison

1.5KE180 New England Semiconductor

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1.5KE180AHB0 Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
Breakdown Voltage-Nom 180 V 180 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 246 V 246 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -35 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 154 V 154 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 71 1
Package Description O-PALF-W2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 189 V
Breakdown Voltage-Min 171 V
JEDEC-95 Code DO-201
Reference Standard AEC-Q101; UL RECOGNIZED

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