1.5KE12A-GT3 vs 1.5KE12_B0_00001 feature comparison

1.5KE12A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

1.5KE12_B0_00001 PanJit Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD PAN JIT INTERNATIONAL INC
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Max 12.6 V 13.2 V
Breakdown Voltage-Min 11.4 V 10.8 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AE DO-201AE
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 10.2 V 9.72 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Part Package Code DO-201AE
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 12 V
Clamping Voltage-Max 17.3 V
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1.5KE12A-GT3 with alternatives

Compare 1.5KE12_B0_00001 with alternatives