1.5KE12A
vs
1.5KE12A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW IMPEDANCE
Breakdown Voltage-Max
12.6 V
12.6 V
Breakdown Voltage-Min
11.4 V
11.4 V
Breakdown Voltage-Nom
12 V
12 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
16.7 V
16.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-201
DO-201
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-40 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
10.2 V
10.2 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
16
Rohs Code
Samacsys Manufacturer
Taiwan Semiconductor
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Reference Standard
UL RECOGNIZED
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
10
Compare 1.5KE12A with alternatives
Compare 1.5KE12A with alternatives