1.5KE12 vs 1.5KE12A-G feature comparison

1.5KE12 Galaxy Semi-Conductor Co Ltd

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1.5KE12A-G Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description O-PALF-W2 LEAD FREE, PLASTIC PACKAGE-2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 13.2 V 12.6 V
Breakdown Voltage-Min 10.8 V 11.4 V
Breakdown Voltage-Nom 12 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 17.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AE DO-201AE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -50 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 5 W
Rep Pk Reverse Voltage-Max 9.72 V 10.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 8 2
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED

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