1.5KE11-T3 vs MQ1N6272AE3 feature comparison

1.5KE11-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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MQ1N6272AE3 Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 12.1 V 11.6 V
Breakdown Voltage-Min 9.9 V 10.5 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AE
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1.52 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 1
Pin Count 2
Manufacturer Package Code CASE 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 11.05 V
Clamping Voltage-Max 15.6 V
JESD-609 Code e3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Rep Pk Reverse Voltage-Max 9.4 V
Terminal Finish MATTE TIN

Compare 1.5KE11-T3 with alternatives

Compare MQ1N6272AE3 with alternatives