1.5KE11-A
vs
1.5KE11A-GT3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
DIODES INC
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
12.1 V
11.6 V
Breakdown Voltage-Min
9.9 V
10.5 V
Breakdown Voltage-Nom
11 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
16.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-PALF-W2
JESD-609 Code
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
40
Base Number Matches
1
2
Package Description
O-PALF-W2
JEDEC-95 Code
DO-201AE
Power Dissipation-Max
5 W
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
9.4 V
Compare 1.5KE11-A with alternatives
Compare 1.5KE11A-GT3 with alternatives