1.4KESD160AE3TR vs P4KE200-T3 feature comparison

1.4KESD160AE3TR Microsemi Corporation

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P4KE200-T3 Won-Top Electronics Co Ltd

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Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP WON-TOP ELECTRONICS CO LTD
Part Package Code DO-35 DO-41
Package Description O-LALF-W2 PLASTIC PACKAGE-2
Pin Count 2 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW CAPACITANCE
Breakdown Voltage-Min 178 V 180 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AH DO-41
JESD-30 Code O-LALF-W2 O-PALF-W2
JESD-609 Code e3 e0
Non-rep Peak Rev Power Dis-Max 1400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 1 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 160 V 162 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 3
Breakdown Voltage-Max 220 V
Breakdown Voltage-Nom 200 V
Clamping Voltage-Max 287 V

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