Part # | Manufacturer | Description | Stock | Price | Buy | |
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IRG4PF50WDPBF
DISTI #
63J7537
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Infineon Technologies AG | Single Igbt, 900V, 51A, Continuous Collector Current:51A, Collector Emitter Saturation Voltage:2.7V, Power Dissipation:200W, Collector Emitter Voltage Max:900V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Msl:- Rohs Compliant: Yes |Infineon IRG4PF50WDPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk IRG4PF50WDPBF Part Details | 0 | Buy Now IRG4PF50WDPBF Part Details |
Part # | Manufacturer | Description | Stock | Price | Buy | |
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International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant IRG4PF50WDPBF Part Details |
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RFQ IRG4PF50WDPBF Part Details |