Parametric results for: BSS138P 215. under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 12

15 hits Apply

Configuration (2)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 4 SINGLE WITH BUILT-IN DIODE 8

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DS Breakdown Voltage-Min (1)

60 V 12

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Drain Current-Max (ID) (2)

320 mA 8 360 mA 4

Min (A) - Max (A)

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Drain-source On Resistance-Max (1)

1.6 Ω 12

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METAL-OXIDE SEMICONDUCTOR 12

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TO-236AB 4

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R-PDSO-G3 8 R-PDSO-G6 4

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e3 13

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Manufacturer (3)

Galaxy Microelectronics 3 Nexperia 6 NXP Semiconductors 6

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1 12

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Number of Elements (2)

1 8 2 4

Min - Max

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Number of Terminals (2)

3 8 6 4

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ENHANCEMENT MODE 12

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150.0 °C 5

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-55.0 °C 3

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PLASTIC/EPOXY 12

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RECTANGULAR 12

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SMALL OUTLINE 12

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Active 9 Transferred 6

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Yes 1

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260 11 NOT SPECIFIED 3

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Polarity/Channel Type (1)

N-CHANNEL 12

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310 mW 1 830 mW 1 1.14 kW 1

Min (W) - Max (W)

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Surface Mount (1)

YES 12

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