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IS49NLS96400A-33WBL
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 603.9798 Mbit | 9 | 64MX9 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B144 | 95 °C | NOT SPECIFIED | NOT SPECIFIED | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | compliant | EAR99 | 8542.32.00.32 | Integrated Silicon Solution Inc. | ||||||||||||||||
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IS49NLC96400A-33WBL
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 603.9798 Mbit | 9 | 64MX9 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | R-PBGA-B144 | e1 | 260 | 10 | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | compliant | EAR99 | 8542.32.00.32 | Integrated Silicon Solution Inc. | ||||||||||||||||
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MTA9ADF1G72PZ-3G2E1
Micron Technology Inc
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$1.0000 | Obsolete | 77.3094 Gbit | 72 | 1GX72 | 1.2 V | SINGLE BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH; WD-MAX | 1 | 1 | 1000000000 | 1.0737 G | SYNCHRONOUS | YES | 1.26 V | 1.14 V | CMOS | OTHER | R-XDMA-N288 | 95 °C | NOT SPECIFIED | NOT SPECIFIED | 288 | UNSPECIFIED | DIMM | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | DUAL | 18.9 mm | 133.35 mm | 3.9 mm | MICRON TECHNOLOGY INC | DIMM, | compliant | EAR99 | 8542.32.00.36 | Micron | 2017-09-20 | ||||||||||||||||
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IS43LQ16256AL-062BLI-TR
Integrated Silicon Solution Inc
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$1.0000 | Active | DDR DRAM | INTEGRATED SILICON SOLUTION INC | unknown | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS46LQ16256A-062BLA2
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.6 GHz | MULTI BANK PAGE BURST | LPDDR4 DRAM | TERM PITCH-MAX; ALSO AVAILABLE WITH 1.7V TO 1.95V SUPPLY | COMMON | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | NO | 1.17 V | 1.06 V | CMOS | INDUSTRIAL | R-PBGA-B200 | 105 °C | -40 °C | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 850 µm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | FBGA-200 | compliant | EAR99 | 8542.32.00.36 | |||||||||||||||
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IS45S16320D-7CTLA1
Integrated Silicon Solution Inc
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$1.0000 | End Of Life | 536.8709 Mbit | 16 | 32MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, | unknown | EAR99 | 8542.32.00.28 | Integrated Silicon Solution Inc. | TSOP2 | 54 | ||||||||||||
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MTA9ADF1G72AZ-3G2E1
Micron Technology Inc
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$1.0000 | Obsolete | 77.3094 Gbit | 72 | 1GX72 | 1.2 V | SINGLE BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH; WD-MAX | 1 | 1 | 1000000000 | 1.0737 G | SYNCHRONOUS | YES | 1.26 V | 1.14 V | CMOS | OTHER | R-XDMA-N288 | 95 °C | NOT SPECIFIED | NOT SPECIFIED | 288 | UNSPECIFIED | DIMM | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | DUAL | 18.9 mm | 133.35 mm | 2.7 mm | MICRON TECHNOLOGY INC | DIMM, | compliant | EAR99 | 8542.32.00.36 | Micron | 2017-11-10 | ||||||||||||||||
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IS46LQ16256A-062BLA1
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.6 GHz | MULTI BANK PAGE BURST | LPDDR4 DRAM | TERM PITCH-MAX; ALSO AVAILABLE WITH 1.7V TO 1.95V SUPPLY | COMMON | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | NO | 1.17 V | 1.06 V | CMOS | INDUSTRIAL | R-PBGA-B200 | 95 °C | -40 °C | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 850 µm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | FBGA-200 | compliant | EAR99 | 8542.32.00.36 | Integrated Silicon Solution Inc. | ||||||||||||||
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IS49NLC18320A-25WBL
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 603.9798 Mbit | 18 | 32MX18 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | R-PBGA-B144 | e1 | 260 | 10 | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | compliant | EAR99 | 8542.32.00.32 | |||||||||||||||||
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MT40A2G4SA-075:E
Micron Technology Inc
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$1.0000 | Obsolete | 8.5899 Gbit | 4 | 2GX4 | 1.2 V | 1.333 GHz | 8192 | MULTI BANK PAGE BURST | DDR4 DRAM | COMMON | 8 | 1 | 1 | 2000000000 | 2.1475 G | SYNCHRONOUS | YES | 8 | 1.26 V | 1.14 V | CMOS | OTHER | R-PBGA-B78 | e1 | 95 °C | 260 | 30 | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7.5 mm | MICRON TECHNOLOGY INC | TFBGA, | compliant | EAR99 | 8542.32.00.36 | Micron | 2017-07-13 |