Part Details for X28HC256DM-12 by Xicor Inc
Overview of X28HC256DM-12 by Xicor Inc
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Applications
Consumer Electronics
Aerospace and Defense
Part Details for X28HC256DM-12
X28HC256DM-12 CAD Models
X28HC256DM-12 Part Data Attributes:
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X28HC256DM-12
Xicor Inc
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X28HC256DM-12
Xicor Inc
EEPROM, 32KX8, 120ns, Parallel, CMOS, CDIP28, CERDIP-28
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | XICOR INC | |
| Package Description | DIP, DIP28,.6 | |
| Reach Compliance Code | unknown | |
| Access Time-Max | 120 ns | |
| Additional Feature | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | |
| Command User Interface | NO | |
| Data Polling | YES | |
| Data Retention Time-Min | 100 | |
| Endurance | 100000 Write/Erase Cycles | |
| JESD-30 Code | R-GDIP-T28 | |
| JESD-609 Code | e0 | |
| Length | 37.15 mm | |
| Memory Density | 262144 bit | |
| Memory IC Type | EEPROM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Terminals | 28 | |
| Number of Words | 32768 words | |
| Number of Words Code | 32000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -55 °C | |
| Organization | 32KX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | CERAMIC, GLASS-SEALED | |
| Package Code | DIP | |
| Package Equivalence Code | DIP28,.6 | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Page Size | 128 words | |
| Parallel/Serial | PARALLEL | |
| Programming Voltage | 5 V | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 7.24 mm | |
| Standby Current-Max | 0.0005 A | |
| Supply Current-Max | 0.08 mA | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Supply Voltage-Min (Vsup) | 4.5 V | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | MILITARY | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Pitch | 2.54 mm | |
| Terminal Position | DUAL | |
| Toggle Bit | YES | |
| Width | 15.24 mm | |
| Write Cycle Time-Max (tWC) | 5 ms |