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VRF157FLMP by:

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

Part Details for VRF157FLMP by Microsemi Corporation

Overview of VRF157FLMP by Microsemi Corporation

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Price & Stock for VRF157FLMP

Part # Distributor Description Stock Price Buy
DISTI # VRF157FLMP
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 10 0
  • 10 $704.5500
  • 100 $686.2500
  • 500 $668.8700
$668.8700 / $704.5500 Buy Now

Part Details for VRF157FLMP

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VRF157FLMP Part Data Attributes:

VRF157FLMP Microsemi Corporation
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VRF157FLMP Microsemi Corporation RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-2
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 170 V
Drain Current-Max (ID) 60 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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