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Power Field-Effect Transistor,
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UF3SC065030B7S by Qorvo is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AK8900
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Newark | Mosfet, N-Ch, 12V, 62A, D2Pak-7, Mosfet Module Configuration:Single, Channel Type:N Channel, Cont... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 775 |
|
$15.0000 / $16.2500 | Buy Now |
DISTI #
UF3SC065030B7S
|
Avnet Americas | Silicon Carbide MOSFET, Single, N Channel, 62 A, 650 V, 35 Milliohms, D2PAK, 7 Pins - Boxed Product ... more RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Box | 0 |
|
$10.7500 / $16.7200 | Buy Now |
DISTI #
431-UF3SC065030B7S
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Mouser Electronics | SiC MOSFETs 650V/30mO,SICFET,G3,TO263-7 RoHS: Compliant | 400 |
|
$11.1900 / $16.7200 | Buy Now |
DISTI #
UF3SC065030B7S
|
Avnet Asia | Silicon Carbide MOSFET, Single, N Channel, 62 A, 650 V, 35 Milliohms, D2PAK, 7 Pins (Alt: UF3SC06503... more RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
UF3SC065030B7S
|
Avnet Silica | Silicon Carbide MOSFET, Single, N Channel, 62 A, 650 V, 35 Milliohms, D2PAK, 7 Pins (Alt: UF3SC06503... more RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 21 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
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UF3SC065030B7S
Qorvo
Buy Now
Datasheet
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Compare Parts:
UF3SC065030B7S
Qorvo
Power Field-Effect Transistor,
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | QORVO INC | |
Package Description | D2PAK-7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Qorvo | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 62 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | JUNCTION CASCODE | |
Feedback Cap-Max (Crss) | 2.3 pF | |
JESD-30 Code | R-PSSO-G7 | |
Number of Elements | 1 | |
Number of Terminals | 7 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 214 W | |
Pulsed Drain Current-Max (IDM) | 230 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |