Datasheets
TIP122 by:

Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 100V; IC (A): 5A; HFE Min: 1000; VCE (V): 3V; IC (mA): 500mA; VCE(SAT) (V): 4V; IC (mA)1: 5000mA; IB (mA): 20mA; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB

Part Details for TIP122 by Galaxy Microelectronics

Overview of TIP122 by Galaxy Microelectronics

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Part Details for TIP122

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TIP122 Part Data Attributes

TIP122 Galaxy Microelectronics
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TIP122 Galaxy Microelectronics Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 100V; IC (A): 5A; HFE Min: 1000; VCE (V): 3V; IC (mA): 500mA; VCE(SAT) (V): 4V; IC (mA)1: 5000mA; IB (mA): 20mA; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code TO-220AB
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 5 A
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 1000
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

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